We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

This paper introduces future devices for multi-valued logic implementation. Quantum dot gate field effect transistor (QDGFET) works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. Quantum dot channel field effect transistor (QDCFET) produces more number of states in their transfer characteristics because of charge flow through the mini-band ...

We report a nanofluidic transistor based on a metal-oxide-solution (MOSol) system that is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET). Using a combination of fluorescence and electrical measurements, we demonstrate that gate voltage modulates the concentration of ions and molecules in the channel and controls the ionic conductance. Our results illustrate the efficacy...

The impact of carrier pulling on the modulation characteristics of a transistor laser is discussed. The results of a theoretical analysis of modulation bandwidth and damping effect show that the carrier transport effect obtained by using a transistor laser allows for a gain compression factor of about one-tenth that of a conventional laser (0.7×1017 cm3), as well as for a maximum modulation ban...

Heteroaromatic oligomer 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) was characterized and assessed as n-channel material in field-effect transistor applications. A single-crystal transistor based on TCDAP as the channel material exhibits a very high electron mobility of 3.39 cm(2) V(-1) s(-1) and an on/off ratio of ∼1.08 × 10(4) respectively.

In 1952, Hodgkin-Huxley have developed an electronic circuit describing the biophysical nature of a neuron. Acetylcholine field effect transistor (AchFET) has been developed in this paper for detection of Acetylcholine (neurotransmitter) and then the AchFET is used in an electronic circuit to reproduce neuronal signals. AchFET is an enzyme field effect transistor (ENFET) fabricated by immobiliz...

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...

The adder circuit is basic component of arithmetic logic design and that the most important block processor architecture. Moreover, power consumption main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used designs with high performance. A creative substitute highspeed, less power, small size in area CNTFET. This paper presents 1- bit f...