نتایج جستجو برای: electron leakage

تعداد نتایج: 337817  

2008
S. Monaghan P. K. Hurley K. Cherkaoui M. A. Negara A. Schenk

We present a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and by electron beam evaporation (e-beam), with equivalent oxide thicknesses in the ran...

2004
Michael H. Leary

InAIAslInGaAs HFET’s fabricated by conventional mesa isolation have a potential parasitic gate-leakage path where the gate metallization overlaps the exposed channel edge at the mesa sidewall. We have unmistakably proven the existence of this path by fabricating special heterojunction diodes with different mesa-sidewall gate-metal overlap lengths. We find that sidewall leakage is a function of ...

Journal: :iranian journal of science and technology (sciences) 2005
k. erenturk

the design and application of a fuzzy logic based controller to a leakage current relay waspresented in this paper. a novel approach based on fuzzy logic to form the tripping action of leakagecurrent relay was investigated. in addition to the theoretical aspect of fuzzy logic, detection of a leakagecurrent, measurement of the leakage current, determination of its duration, trip opening of fault...

ژورنال: علوم آب و خاک 2017

The water supply networks have always been of significance to researchers as a hydraulic system of transferring and distributing water. The pressure gradient is the main reason of water transfer in networks, and in case of non-standard pressure increase, the undesirable phenomenon of leakage occurs in the network. Leakage in urban water distribution networks causes water waste and enormous fina...

2010
R. Sarma D. Saikia P. Saikia P. K. Saikia R. Sharma

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

2009
Hao Xu Ranga Vemuri Wen-Ben Jone

Ever since the invention of various leakage power reduction techniques, leakage and dynamic power reduction techniques are categorized into two separate sets. Most of them cannot be applied together during runtime. The gap between them is due to the large energy breakeven time (EBT) and wakeup time (WUT) of conventional leakage reduction techniques. This paper proposes a new leakage reduction t...

1996
J. Gonichon

We present detailed beam dynamic simulations in a compact X band accelerator. The accelerator must be capable of delivering an electron beam of 0.5 MW peak at 6 MeV, in order ot produce an X ray dose of 10 Gy/mn at 80 cm for medical applications. The use of a PARMELA like code (DYPAL [1]) allowed us to investigate radial and longitudinal beam dynamics. Important aspects of the calculation were ...

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