We analyze single-electron tunneling from the bound state above the surface of liquid helium. For strong enough magnetic fields parallel to the surface, the tunneling must be accompanied by ripplon scattering. The effective width of the tunneling barrier strongly and nonmonotonically depends on the momentum transferred to ripplons. The escape rate is affected by Landau quantization of the state...

Resonant tunneling through two identical potential barriers renders them transparent, as particle trajectories interfere coherently. Here we realize resonant tunneling in a quantum dot (QD), and show that detection of electron trajectories renders the dot nearly insulating. Measurements were made in the integer quantum Hall regime, with the tunneling electrons in an inner edge channel coupled t...

Experimental investigations of spin-polarized electron confinement in nanostructures by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are reviewed. To appreciate the experimental results on the electronic level, the physical basis of STM is elucidated with special emphasis on the correlation between differential conductance, as measured by STS, and the electron d...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

The area and perimeter dependences of the Josephson-like interlayer tunneling signature of the coherent T=1 quantum Hall phase in bilayer two-dimensional electron systems is examined. Electrostatic top gates of various sizes and shapes are used to locally define distinct T=1 regions in the same sample. Near the phase boundary with the incoherent T=1 state at large layer separation, our results ...

-The phonon-assisted band-to-band tunneling rate in crystalline silicon is calculated using the equilibrium Green's function formalism. Electron-phonon collisions, that balance the momentum, are included in the perturbation operator. Houston-type solutions are used for the time dependence of the Bloch states. RPA deeoupling yields a tractable expression for the differential tunneling conductivi...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

We have developed a material specific theoretical framework for modeling scanning tunneling spectroscopy (STS) of high-temperature superconducting materials in the normal as well as the superconducting state. Results for Bi2Sr2CaCu2O8+delta (Bi2212) show clearly that the tunneling process strongly modifies the STS spectrum from the local density of states of the dx2-y2 orbital of Cu. The domina...

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including als...