METHOD: This study was carried out in a controlled laboratory environment setting. Clostridium difficile spores were placed in a laboratory room, in direct line of sight of the UV-C emitter device (the Emitter). This study only used definitive, preselected UV-C dose settings and was not based on treatment time or the distance the coupons were located from the Emitter. The dose delivered was mea...

Efficiencies of large area n-type silicon solar cells with a screen printed rear side aluminum-alloyed emitter are mainly limited by their front surface recombination velocity. The front surface therefore has to be passivated by an effective passivation layer combined with a front surface field (FSF). In this work we investigate the influence of the front surface passivation quality and the bas...

Radar emitter signal recognition is one of the key procedures in signal processing of Electronic Intelligence. To enhance the ability of online recognition to meet the requirement of modern electronic warfare, A novel recognition approach for radar emitter signals based on on-line independent support vector machines is presented in this paper. Based on the cascade feature extraction of radar em...

The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff's law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS...

A sensor using infrared emitter/receiver pairs to determine the position of a passive object is presented. An array with a small number of infrared emitter/receiver pairs are proposed as sensing part to acquire information on the object position. The emitters illuminates the object and the intensity of the light reflected by the object is measured by the receivers. The emitter/receiver pairs ar...

We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 um exhibits fmax of 330 GHz at the current of 100 mA. The common emitter device with emitter area of 64 um shows fmax of 371 GHz when biased at 57 mA. The breakdown voltage of these DHBTs is up to 7 volts at low current density. All the devices...

Several classifiers are available for the identification of radar emitter types from their waveform parameters. In particular, these classifiers can be applied to data that is affected by some types of noise. This paper proposes a more efficient classifier, which uses on-line learning and is attractive for real time applications, such as electronic support measures. A self-organizing interval t...

In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar transistors (IGBTs). The IGBTs were subjected to electrical–thermal stress under a resistive load until their failure. Monitored on-state collector–emitter voltage and collector–emitter currents were used as input parameters...

We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum. All critical dimensions of the emitter tip were determined by a single process step of Inductively Coupled Plasma (ICP) etching. In addition, the height difference between the emitter tip and the gate plane was controlled by the thickness of the SiO2 d...

An analytical study of the effect of neutral base recombination on various transistor performance characteristics is presented. Using an approximate life time model which is suitable for BJT’s, pseudo-HBYs, and HBT’s with small variations in bandgap, closed form analytical relations for common emitter current gain, Early voltage and base and emitter delay times are derived including the effect ...