This work reports the effect of doping concentration on energy-band structure semiconductor materials. The research focuses resultant values bandgap energy and its depletion region (length/area), based initial concentrations which are donors acceptors. diagram is simulated by initializing various materials’ properties Gallium Nitride (GaN) Arsenide (GaAs), solving Poisson’s equation derived fro...

Abstract: In this study, using density functional theory and the SIESTA computationalcode, we investigate the electronic and optical properties of the armchair graphenenanoribbons and the armchair boron nitride nanoribbons of width 25 in the presence of atransverse external electric field. We have observed that in the absence of the electricfield, these structures are se...