Results from synchrotron X-ray topography and electrical characterization of thick epitaxial GaAs p–i–n structures suitable for manufacturing of radiation detectors are reported. The structures under study have been grown with hydride vapor phase epitaxy method. A comprehensive set of large-area transmission, large-area back-reflection and transmission section topographs are analyzed. The X-ray...

we adapt the level-set method to simulate epitaxial growth of thin films on a surface that consists of different reconstruction domains. Both the island boundaries and the boundaries of the reconstruction domains are described by different level-set functions. A formalism of coupled level-set functions that describe entirely different physical properties is introduced, where the velocity of eac...

In-plane aligned, c-axis oriented YBazCu307 (YBCO) films with superconducting critical current densities, Jc, as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (00 1) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure...

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contr...

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The complex index of refraction in the spectral range of 0.74 to 4.5 eV is studied by variable-angle spectroscopic ellipsometry in ferroelectric K0.5Na0.5NbO3 films. The 20-nm-thick cube-on-cube-type epitaxial films are grown on SrTiO3(001) and DyScO3(011) single-crystal substrates. The films are transparent and exhibit a significant difference between refractive indices Δn = 0.5 at photon ener...

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Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the reso...

We report an epitaxial growth technique for scalable production of hybrid sodium rare-earth fluoride (NaLnF4 ) microcrystals, including NaYF4 , NaYbF4 , and NaLuF4 material systems. The single crystalline nature of the as-synthesized products makes them strong upconversion emission. The freedom of combining a lanthanide activator (Er(3+) or Tm(3+) ) with a sensitizer (Yb(3+) ) at various doping...

In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...