It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is encountered as the amount of bias power used in the SiO2 etching process is increased, and a transition from fluorocarbon film growth on the SiO2 to an...

Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP !inductively coupled plasma" with chrome etch masks, which were patterned by reactive ion etching !RIE" using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough !root-mean s...

in this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. in order to define silicon nanostructures, metal-assisted chemical etching (mace) was carried out with silver catalyst. provided solution (or materiel) in combination with laser interference lithogr...

Quite recently, ion-track membranes of poly(vinylidene fluoride) (PVDF) have attracted a renewed interest for their applications to next-generation electrochemical devices such as fuel cells [1,2]. In order to produce tracketched pores in PVDF films, several kinds of etching solutions were previously employed. In most cases [3], a highly concentrated aqueous KOH solution with a KMnO4 additive w...

We consider the situation where a multicomponent solid is etched using one or more acids. Of fundamental interest is the rate of surface etching but when this involves multicomponent surface reactions, it becomes unclear how the overall rate can be estimated. In this paper, we sketch a simple model designed to determine the effective etching rate by means of an atomic scale model of the etching...

The bulk etch rate for CR-39 in NaOH/ethanol was faster than those in aqueous solution of NaOH (NaOH/H2O). Furthermore, a layer of precipitate always accumulates on the surface of CR-39 detector during etching in NaOH/ethanol, which is absent during etching in NaOH/H2O. In the present work, mass spectrometry results have shown that the same etched products are present in the etchants of NaOH/H2...

Purpose: The aim of the study was to evaluate micro-tensile bond strength and the conditioning patterns of a self-etching primer bonding system to un-etched (with extended priming) and etched ground fluorosed enamel. Materials and Methods: Extracted premolars were classified according to severity of fluorosis using Thylstrup and Fejerskov index (TFI: 0, normal; 1-3, mild fluorosis; and 4-6, mod...

In this paper, dry etching of silicon micro-trenches were completed with a time multiplexed inductively coupled plasma (ICP) etcher. By change the time of etching and passivation cycles, applied electrode and coil powers, gas flow rates and the gas flow overlap due to the finite time response of the mass flow controllers, the etch rate of silicon and mask materials, aspect ratio, the profiles o...