نتایج جستجو برای: failure cause

تعداد نتایج: 729436  

2009
Michael Pecht Jie Gu

This paper presents a physics-of-failure (PoF)-based prognostics and health management approach for effective reliability prediction. PoF is an approach that utilizes knowledge of a product’s life cycle loading and failure mechanisms to perform reliability design and assessment. PoF-based prognostics permit the assessment of product reliability under its actual application conditions. It integr...

2010
Michael H. Coen M. Hidayath Ansari Nathanael Fillmore

This paper proposes a new method for comparing clusterings both partitionally and geometrically. Our approach is motivated by the following observation: the vast majority of previous techniques for comparing clusterings are entirely partitional, i.e., they examine assignments of points in set theoretic terms after they have been partitioned. In doing so, these methods ignore the spatial layout ...

Journal: :Microelectronics Reliability 2015
R. Alberti Riccardo Enrici Vaion A. Mervic S. Testa

2007
H. Z. Li H. Zeng X. Q. Chen

ABSTRACT Inconel 718 is a difficult-to-cut nickel-based superalloy commonly used in aerospace industry. This paper presents an experimental study of the tool wear propagation and cutting force variations in the end milling of Inconel 718 with coated carbide inserts. The experimental results showed that significant flank wear was the predominant failure mode affecting the tool life. The tool fla...

2006
Peng Wang David W. Coit

This paper developed extensions to the existing research so that reliability assessment based on degradation modeling can address new problem domains that previously did not meet the required assumptions and modeling constraints. Degradation modeling is based on probabilistic modeling of a failure mechanism degradation path and comparison of a projected distribution to a pre-defined failure thr...

2001
Melanie Ott

In general, high temperature testing is used to determine LED and laser diode lifetimes, even though laser diode failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in a laser diode. Raising the current density however, is not really indicative of lifetime sin...

1996
Michael J. Ohletz

common use is the distinction into two (abstract) fault models: A new fault modelling scheme for integrated analogue general the "Single Hard Fault Model (SHFM)" and the CMOS circuits referred to as Local Layout Realistic Fault Mapping is introduced. It is aimed at realistic fault 1 assumptions prior to the final layout by investigating typical “local” layout structures of analogue designs. Spe...

2018
Donal P. Finegan Eric Darcy Matthew Keyser Bernhard Tjaden Thomas M. M. Heenan Rhodri Jervis Josh J. Bailey Nghia T. Vo Oxana V. Magdysyuk Michael Drakopoulos Marco Di Michiel Alexander Rack Gareth Hinds Dan J. L. Brett Paul R. Shearing

At a critical temperature, active materials within Li-ion batteries break down, generating heat and gas. Thermal runaway occurs when this process accelerates after the temperature of the cell begins to rise, leading to hazardous failure mechanisms such as the cell bursting. In article number 1700369, Paul R. Shearing and co-workers use high-speed X-ray imaging to capture and characterize such h...

2010
Jian Zhao

Rock slope instabilities are discussed in the context of decision making for risk assessment and management. Hence, the state of the slope and possible failure mechanism need to be defined first. This is done with geometrical and mechanical models for which recent developments are presented. This leads with appropriate consideration of uncertainties to risk determination and to the description ...

Journal: :Microelectronics Reliability 2011
Usama Zaghloul George J. Papaioannou Bharat Bhushan Fabio Coccetti Patrick Pons Robert Plana

This paper reviews the state of the art knowledge related to critical failure mechanisms in electrostatic microand nano-electromechanical systems (MEMS and NEMS) which are the dielectric charging and stiction. It describes also the recent employed nanoscale characterization techniques for these phenomena based on Kelvin probe force microscopy (KPFM) and force–distance curve measurements. The in...

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