Doping ZnO with rare earth and 4d transition elements is a popular technique to manipulate the optical properties of ZnO systems. These systems may also possess intrinsic ferromagnetism due to their magnetic moment borne on 4f and 4d electrons. In this work, the structural, electronic, and magnetic properties of Eu- and Pd-doped ZnO were investigated by the ab initio density functional theory m...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electro...

In this paper, we present the electronic, optical, and water-splitting properties of Fe-doped ZnO monolayer by first-principles method. The acquired results demonstrate that Fe doping induces band level decreases gap whereas intrinsic vacancies also induce levels enrich optoelectronic properties. formation energy validate in ZnO. We observed zinc vacancy can be created easily an oxygen-rich con...

p-type Sb-doped ZnO (ZnO:Sb)/n-type Ga-doped ZnO (ZnO:Ga) junctions were grown on c-plane sapphire substrates using plasma-assisted molecular-beam epitaxy. Mesa geometry light emitting diodes (LEDs) were fabricated using standard photolithography and lift-off process, with ohmic contacts achieved using Au/Ni and Au/Ti for top ZnO:Sb and bottom ZnO:Ga layers, respectively. Rectifying current–vol...

A detailed study has been presented of optical, electrical, structural and magnetic properties of Zn1–xCoxO (0 < x ≤ 0.25) films co-doped with 1 at. % of Al. The polycrystalline films have been synthesized on Corning glass 7059 substrates by the sol-gel technique using spin coating. Highly preferential c-axis oriented films have been obtained at the annealing temperature of 600 °C. The lattice ...

In this study, a series of 3d transition metal (TM) (Co, Ni and Fe) doped ZnO particles synthesized by simple co-precipitation method. Structural, morphological magnetic properties were investigated to determine correlation between growth process ferromagnetism samples. All samples had hexzagonal würtzite structure slightly shift indexed peaks was observed TM incorporation in ZnO. Although gran...

Undoped and 8 at. % Al doped ZnO films are deposited on glass substrates by sol-gel spin coating. The XRD patterns reveal polycrystalline nature of the with hexagonal Wurtzite phase. particle sizes calculated via Debye Scherrer formula lie between 21 to 66 nm. Presence tensile strain is observed Williamson Hall analysis. Almost 3.5 times enhancement happens when dopant introduced as compared un...

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...