Arising applications of ferroelectric materials in photovoltaic devices" The ferroelectric-photovoltaic (FE-PV) device, in which a homogeneous ferroelectric material is used as a light absorbing layer, has been investigated during the past several decades with numerous ferroelectric oxides. The FE-PV effect is distinctly different from the typical photovoltaic (PV) effect in semiconductor p–n j...

Ferroelectric materials are characterized by spontaneous electric polarization that can be reversed by inverting an external electric field. Owing to their unique properties, ferroelectric materials have found broad applications in microelectronics, computers, and transducers. Water molecules are dipolar and thus ferroelectric alignment of water molecules is conceivable when water freezes into ...

We analyze the possibility of a ferroelectric transition in heteronuclear molecules consisting of Bose-Bose, Bose-Fermi, or Fermi-Fermi atom pairs. This transition is characterized by the appearance of a spontaneous electric polarization below a critical temperature. We discuss the existence of a ferroelectric Fermi liquid phase for Fermi molecules and the existence of a ferroelectric superflui...

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multif...

Parallel-plate capacitors based on ferroelectric thin films are considered as high density capacitors and varactors. Due to the small thickness of the ferroelectric films, typically less than 1.0 μm, high electric fields are generated even at relatively low voltages inducing piezoelectric effect associated with electrostriction. This induced piezoelectric effect has negative impact on ferroelec...

Keywords: HfO 2 Analytical model Surface potential Ferroelectric Nonvolatile memory Fe-TFET a b s t r a c t The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as...

One-dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric-photovoltaic (FE-PV), and other unique physical properties, 1D ferroelectric nanostructures have...

The Co0.7-xNixMn0.3Fe2O4 (CNMFO) ferrites with x = 0.00, 0.05, 0.10 and 0.15, PbZr0.52Ti0.48O3 (PZT) ferroelectric 30% CNMFO – 70% PZT magnetoelectric (ME) composites were synthesized by double sintering ceramic method. XRD confirmed the pure phase formation of all compositions ferrite, ME composites. All ferrites, show negative temperature coefficient resistance (NTCR) confirming semiconductin...

Structural, dielectric, ferroelectric, energy storage properties, and electrocaloric effect were studied in lead-free ceramic Ba0.95Ca0.05Ti0.89Sn0.11O3 (BCTSn) elaborated by the sol–gel method. Phase purity structure was confirmed from X-ray data using Rietveld refinement analysis which revealed coexistence of tetragonal (P4mm) orthorhombic (Amm2) symmetries at room temperature. transitions de...