Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading Si/GaAs tunnel junctions (TJs). atomic-scale features H-O-terminated TJ analyzed compared those heterojunctions with no UVO tre...

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces with oxides. Indeed, proper device operation is generally prevented by a high density of interface defect states which lead to Fermi-level p...

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between...

Optically active, highly uniform, cylindrical InGaAs quantum dot QD arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy MBE -assisted GaAs mass transport. Previously fabricated QD nanopillar arrays showed significant degradation of optical properties due to the etch damage. Here, a novel mass transport process in a ...

We simulated capacitance–voltage (C – V) curves of Si3N4 /GaAs, Si3N4 /Si and also Si3N4 /Semi* ~virtual semiconductor! metal–insulator–semiconductor ~MIS! capacitors and compared them with experimental C – V curves of a Si3N4 /Si/GaAs structure. The experimental C – V curves of the Si3N4 /Si/GaAs MIS capacitors are not in agreement with the simulated C – V curves of the Si3N4 /GaAs and Si3N4 /...

Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis" (1995). Using variable angle spectroscopic ellipsometry, optical constants for AlAs (1.4-5.0 eV) are presented which are simultaneously compatible with measured data from four different samples. The below-gap index values are compatible with published prism measured values. The secon...

~ We propose a method to generate steps at the surface of GaAs single crystals. This method is based on plasticity properties of GaAs. In the simple slip condition, the (541

ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...

In this report we explore the structural and optical properties of GaAs/AlGaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodoluminescence (CL) in a scanning electron microscope (SEM).We perform a systematic investigation of how thenanowire growth-temperature affects the total photon emissio...

Fibre-optic components fabricated on the same substrate as integrated circuits are important for future high-speed communications. One industry response has been the costly push to develop indium phosphide (InP) electronics. However, for fabrication simplicity, reliability and cost, gallium arsenide (GaAs) remains the established technology for integrated optoelectronics. Unfortunately, the GaA...