Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in GaAs as well as to assess its free energy of formation and the rate constant of gallium self-diffusion. Our analysis suggests that the vacancy migrates by second nearest neighbour hops. The calculated self-diffusion constant is in good agreement with the experimental v...

Widely used in microelectronics and optoelectronics; Gallium Arsenide (GaAs) is a III-V crystal with several interesting properties for microsystem and biosensor applications. Among these; its piezoelectric properties and the ability to directly biofunctionalize the bare surface, offer an opportunity to combine a highly sensitive transducer with a specific bio-interface; which are the two essen...

The electron distribution function for gallium arsenide GaAs was calculated by using the Boltzmann transition equation in central valley , a range of low fields relative to threshold field (E0 = 5.95Kv/cm) (0.3-1)E0. To obtain function, transport solved mechanism that combines analytical and numerical methods. Analytical method involving extension Legendre polynomial used effect polar optical s...

This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In new radio (NR) fifth generation (5G) communication system, inter-band carrier aggregation technique is commonly adopted for data rate enhancement. such configuration, operation both bands 5G frequency range 2 (FR2) spectrum often necessary. The stacked-FET topology was mitig...

Reports on the work Professor Si-Chen Lee who teaches in Department of Electrical Engineering at National Taiwan University. His current research interests include semiconductor device applications such as indium gallium arsenide/indium arsenide quantum dot infrared photodetectors, photonic crystal thermal emitters with probing biological reactions cells, and exhaled gas detection for remote he...