We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-orbit coupling. We illustrate our idea by performing ab initio calculations for graphene adsorbed on the (111) surface of BiFeO3. In this case, we find that the proximity-induced exchange field in graphene is about 70 m...

A novel clinical glucose biosensor fabricated using functionalized metalloid-polymer (silver-silica coated with polyethylene glycol) hybrid nanoparticles on the surface of a graphene oxide nanosheet is reported. The cyclic voltammetric response of glucose oxidase modification on the surface of a functionalized graphene oxide electrode showed a surface-confined reaction and an effective redox po...

Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed b...

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The dynamic configuration of reduced graphene oxide (rGO) in an aqueous dispersion is revealed by several characterization methods, showing a spontaneous and seemingly irreversible configuration transition from flat to highly corrugated sheets over time. Such dynamic behaviour of rGO leads to a tailored porous structure of graphene-based thin films. This affects their permeation and electrochem...

Transition metal dichalcogenides (TMDs) are of interest in numerous applications due to their interesting physical properties. Especially, in thin films they are superior to graphene, due to their ability to be functionalised. Incorporation of that thin film properties in the bulk is challenging. One method is the creation of metastable ferecrystals or stable misfit layer compounds (MLCs), whic...

Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained aft...

Although two-dimensional thin-film nanostructures such as graphene are extremely promising for future optical or electronic devices, the required manufacturing technologies are still lacking. Herein the authors introduce a robotically controlled electro-osmotic spray deposition method of colloids with a high electric potential to create optoelectronic devices directly onto the surface of graphe...

Theoretical works suggest the possibility and usefulness of strain engineering of graphene by predicting remarkable properties, such as Dirac cone merging, bandgap opening and pseudo magnetic field generation. However, most of these predictions have not yet been confirmed because it is experimentally difficult to control the magnitude and type (e.g., uniaxial, biaxial, and so forth) of strain i...

We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ∼0.09(2e(2)/h) at low temperatures and is measurable up to ∼300  K. Our observations indicate not only proximity-induced ferromagnetism in graphene/YIG with a large exchange interaction, ...