In the present study, the unit cells of metallic Hafnium (Hf), Hafnium Oxide (HfO2), and Titanium Nitride (TiN), which are the components of a novel Hf/HfO2/TiN three-layer stack with great potential for applications in nanoelectronics, are theoretically described by employing the plane wave pseudopotential approach as implemented in the Vienna Ab Initio Simulation Package (VASP). All the calcu...

Zirconium and Hafnium Ziegler-Natta catalysts containing the [(2,6C12C6H3NCH2CH2)2NMe] ([ArciN2NMe]) ligand were prepared and employed in the polymerization of 1-hexene. Hafnium Ziegler-Natta catalysts containing the [(2,6X2C6H3NHCH2)2C(CH3)(2-C5H4N)] ([Arx2NPy]) (X = Cl or F) ligand were also prepared for use in 1-hexene polymerization studies. Compounds of the type [Ligand]MR 2 (R = Me, i-Bu)...

Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...

Eudialyte-group minerals are of scientific interest as important concentrators rare elements (mainly Zr and REE) in agpaitic alkaline rocks a potential source REE, Zr, Hf, Nb, Ta for industrial use. Extraction uranium(VI), thorium(IV), zirconium(IV), hafnium(IV), titanium(IV), scandium(III) by binary extractant based on 1,5-bis[2-(hydroxyethoxyphosphoryl)-4-ethylphenoxy]-3-oxapentane methyl tri...

The oxygen vacancy-related polaron-like bound state migration in HfOx accounting for the observed transport properties in the high resistance state of resistive switching is investigated by the density functional theory with hybrid functional. The barrier of hopping among the threefold oxygen vacancies is strongly dependent on the direction of motion. Especially, the lowest barrier along the <0...

In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...

Evaporated optical coatings fabricated from hafnium dioxide and silicon dioxide are the standard approach for high-peak-power laser components due to the high laser damage resistance of such coatings and the ability to deposit on largeaperture substrates. The tensile film stresses of such coatings may lead to failure, however, particularly in low-relative-humidity purged or vacuum use environme...

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...