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In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important role...

We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/G...

Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...

We report traveling-wave amplifiers having 1–112 GHz bandwidth with 7 dB gain, and 1–157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have y...

ABSTRACT Mobile phones or portable Hand Set (PHS) use the combination of wireless communication and optical fiber communication. Microwave power transistors play key role in today‟s wireless communication. HEMT is finding wide application due to its high speed. Analytical results for various DC parameters under the optical illumination are presented. The photovoltaic effect at the gate junction...

We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures...

Unintentionally doped (UID) AlGaN/GaN-based multichannel high electron mobility transistor (MC-HEMT) heterostructures have been demonstrated on the SiC substrate using plasma-assisted molecular beam epitaxy. The MC-HEMT heterostructure with a GaN channel thickness of 100 nm resulted in cumulative two-dimensional gas (2DEG) concentration 4.3 × 1013 cm−2 across six channels. sample showed sheet r...

A Quasi-two Dimensional HEMT model is presented which for the first time describes accurately the I-V characteristics close to device pinch-off and at high drain current. The model uses a new analytical model for describing the injection of charge into the buffer material. This analytical description works in conjunction with an asymptotic boundary condition in the charge control solution to dr...

This article presents a 26–30 GHz gallium nitride (GaN) high electron mobility transistor (HEMT) low-noise amplifier (LNA) for fifth-generation base station applications. In the proposed design, series inductor-based stability enhancement technique was utilized to improve reverse isolation and performance of mitigate effect parasitic capacitance GaN HEMT device. To validate concept three-stage ...