A new bipolar transistor model called VBIC has recently been developed and is likely to replace the Gummel–Poon model as the new industry standard bipolar transistor model. This paper focuses on the comparison of the VBIC and Gummel–Poon models under the dc operations. The extraction and optimization procedure coded in S+ statistical language and required for VBIC simulation is also developed a...

|The steady state drift-diiusion model for the ow of electrons and holes in semiconductors is sim-pliied by perturbation techniques. The simpliications amount to assuming zero space charge and low injection. The limiting problems are solved and explicit formulas for the voltage-current characteristics of bipolar devices can be obtained. As examples, the pn-diode, the bipolar transistor and the ...

The two port network method has been employed in the case of bipolar transistor high frequency amplifier design with excellent results.1, 2, 3, 4, 5 Gain, device terminal admittances, and stability are all exact computations free of approximations. Fortunately, the theory and design equations currently being used for bipolar amplifiers are fully applicable to FET’s. This is due to one of the ma...

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott materia...

The multifrontal LU method is implemented to solve drift-diffusion models with large sparse matrices arising in the simulation and optimization of semiconductor devices. The performance of this method is compared with the LU algorithm without multifrontal scheme on different computers in the case of a realistic double heterojunction transistor. Résumé On emploie un méthode LU multifrontale pour...

Asimple analytic method for transistor oscillator design has been developed. This technique defines explicit expressions for optimum values of feedback elements and load through bipolar transistor z-parameters. Such an approach is useful for practical optimization of a series feedback microwave bipolar oscillator. Microwave oscillator design in general represents a complex problem. Depending on...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...