نتایج جستجو برای: high electron mobility transistor

تعداد نتایج: 2357262  

2013
Barry Brennan Xiaoye Qin Hong Dong Jiyoung Kim Robert M. Wallace

Related Articles Ethanol-enriched low-pressure chemical vapor deposition ZnO bilayers: Properties and growth—A potential electrode for thin film solar cells J. Appl. Phys. 113, 024908 (2013) Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate J. Appl. Phys. 113, 023510 (2013) High p-type conduction in hig...

2013
Santosh Kumar Patel Shafqat Abdullah Khan Sachin Kumar

This paper presents the design and simulation of a 2.4 GHz ISM band front end single stage Low Noise Amplifier (LNA) for wireless transceiver system. This amplifier uses AVAGO ATF-54143 transistor which is a low noise and high dynamic range Pseudomorphic high electron mobility transistor. The proposed method is addressed to optimize noise performance and power efficient while maintaining good i...

Journal: :Physica Status Solidi (rrl) 2022

Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low pressure conventionally used precursor tris-cyclopentadienyl-scandium (Cp3Sc). It shown that electrical and structural characteristics AlScN/GaN heterostructure improve significantly using bis-methylcyclopentadienyl-scandiumchloride ((MCp)2ScCl), w...

2007
Ching-Sung Lee Chien-Hung Chen Jun-Chin Huang Ke-Hua Su

This work provides comparative studies of a double -doped Al0.3Ga0.7As/InxGa1−xAs/GaAs symmetrically graded x = 0.15 → 0.2 → 0.15 doped-channel field-effect transistor DD-DCFET with respect to a conventional double -doped pseudomorphic high electron mobility transistor pHEMT and a conventional DCFET structure. All threes samples, grown by the low-pressure metallorganic chemical vapor deposition...

2016
Haowen Hou Min Woo Ryu Jeong Seop Lee Zhihong Liu Jinghua Teng Tomás Palacios Soo-Jin Chua

2016
Xun Li J. Bergsten Daniel Nilsson Örjan Danielsson Henrik Pedersen N. Rorsman Urban Forsberg X. Li D. Nilsson O. Danielsson H. Pedersen E. Janz U. Forsberg

Journal: :IEICE Transactions 2011
Young Su Kim Min Ho Kang Kang Suk Jeong Jae Sub Oh Yu Mi Kim Dong Eun Yoo Hi Deok Lee Ga Won Lee

We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiNx for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO2/Si substrates at 100◦C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-μm and channel length of 5-μm. The fabricated coplanar dual-gate ZnO ...

Journal: :IEEE Transactions on Electron Devices 2010

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