CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

This paper presents an improved electronic circuit for testing photovoltaic (PV) modules or strings by tracing their I-V and P-V characteristics. It consists of an electronic fast varying load based on a power MOSFET controlled by means of an innovative sweeping gate-source voltage in order to improve the tracing of the I-V characteristics on an oscilloscope. In order to prevent damage of data ...

‎‎let $g=(v,e)$ be a simple graph‎. ‎an edge labeling $f:eto {0,1}$ induces a vertex labeling $f^+:vtoz_2$ defined by $f^+(v)equiv sumlimits_{uvin e} f(uv)pmod{2}$ for each $v in v$‎, ‎where $z_2={0,1}$ is the additive group of order 2‎. ‎for $iin{0,1}$‎, ‎let‎ ‎$e_f(i)=|f^{-1}(i)|$ and $v_f(i)=|(f^+)^{-1}(i)|$‎. ‎a labeling $f$ is called edge-friendly if‎ ‎$|e_f(1)-e_f(0)|le 1$‎. ‎$i_f(g)=v_f(...

We have observed at low temperatures (≤ 8K) hysteretic I(V ) characteristics for sub-μm (∼200 nm) metallic break-junctions based on the heavy-fermion compound UPd2Al3. Degrading the quality of the contacts by in situ increasing the local residual resistivity or temperature rise reduces the hysteresis. We demonstrate that those hysteretic I(V ) curves can be reproduced theoretically by assuming ...

To evaluate the changes of ABR values in hyperbilirubinemic newborns, 85 cases with severe jaundice (total bilirubin levels over 16 mg/dL and direct bilirubin less than 2 mg/dL) were selected from those admitted to Children's Medical Center by simple sampling method. These infants had no other problem except jaundice. ABR was taken before treatment in all cases and in some (10 cases) after...

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I–V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3×10 A vs. ...

The current-voltage characteristics of a PtSi/p-Si Schottky barrier diode was measured at the temperature of 85 K and from the forward bias region of the I-V curve, the electrical parameters of the diode were measured by three methods. The results obtained from the two methods which considered the series resistance were in close agreement with each other and from them barrier height ( ), ideali...