InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contras...

3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine s...

The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed...

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the...

The III nitrides have been intensely studied in recent years because of their huge potential for everything from high-efficiency solid-state lighting and photovoltaics to high-power and temperature electronics. In particular, the InGaN ternary alloy is of interest for solid-state lighting and photovoltaics because of the ability to tune the direct bandgap of this material from the near-ultravio...

Smooth N-polar InGaN/GaN and AlGaN/GaN multiquantum wells MQWs and heterostructures were grown by metal organic chemical vapor deposition on 0001 sapphire substrates with misorientation angles of 2° –5° toward the a-sapphire plane. For all investigated structures the tendency toward formation of multiatomic steps at the film surface and at interfaces increased with increasing misorientation ang...

Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth...

A challenge in the development of nanometer-scale devices, which are envisioned to impact human life in the near future, is the development of economical techniques for the fabrication of their building blocks. Owing to their unique and exquisite characteristics, nanowires are ideal building blocks for functional nanometer-scale electronics, photonic structures, and nanosurgery devices. Here, w...

Articles you may be interested in Effect of n-p-n heterostructures on interface recombination and semiconductor laser cooling Probing strained InGaN/GaN nanostructures with ultrashort acoustic phonon wave packets generated by femtosecond lasers Appl.

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