This paper presents an extensive review of the analysis, modeling, design, testing and other aspects of an electronic load controller (ELC) found in the literature .The assumptions made and a brief description of the solution methods is presented. This paper describes step by step development in the area of ELC which provides helpful information and resources for the future studies for those in...

the efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. silicon nanowire sensor, nanosphere sensor and double gate fiel...

We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show...

A field effect transistor (FET) whose gate surface has been modified with a stimuli-responsive "smart" polymer gel can visualize the kinetics of the chemo-mechanical signal transduction as a mode of its altered electrical characteristics without any labels.

According to Moore’s law, the number of transistor embedded on integrated circuit (IC) doubles approximately every two years. Thus, the size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has to be scaled down as an increase in packing density. In current technology, the size of a transistor has shrunk below 45nm, and it has already reached its physical limit. Any attempt to shri...

A low-side switch is a MOSFET or an IGBT that is connected to the ground-referenced and is not floating. In a boost converter, the source terminal of the MOSFET is connected to the circuit ground, which is referred to a low-side MOSFET. To switch an N-channel MOSFET of a boost converter on, the V should be in the order of 10 to 20V. Since the source terminal is grounded, this implies that the g...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of th...

Articles you may be interested in Publisher's Note: " Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing " [Appl. pH sensing properties of graphene solution-gated field-effect transistors Detection of sulfur dioxide gas with graphene field effect transistor Appl. Probing transconductance spatial variation...

The central device of this thesis is the transistor. It acts like a faucet, but then for electric charge. There is a connection that is called the source, just like the water company. And the charge flows into the drain. Finally there is a handle, here called the gate, to control the flow of charge. The transistor is not an ideal faucet for electrons. For example, even when the gate is closed a...