نتایج جستجو برای: junctionless tunnel field effect transistor
تعداد نتایج: 2369586 فیلتر نتایج به سال:
Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias behaves like transistor due tunnelling mechanism the charge carriers across barrier called band-to-band (BTBT). fac...
Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...
In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...
In this paper, using non-equilibrium Green's function method, the performance of junctionless transistors that are with Si, InP, and InGaP channels material are investigated.The shape of transistor’s gate is chosen as gate all around (GAA). Parameters such as DIBL, subthreshold slope (SS), OFF-state current, ON-state current and ON/OFF current ratio in these devices are investigated. The ...
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