نتایج جستجو برای: lightly doped drain and source ldds
تعداد نتایج: 16884870 فیلتر نتایج به سال:
This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. It is based on the solution of PoissonBoltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is contin...
This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped-drain MOS (HV MOS) devices by extending the bi-directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi-directional HV MOS model and its parameter extracti...
This paper presents for the first time a continuous analytic I–V model for long-channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. It is based on the solution of the Poisson–Boltzmann equation and the current continuity equation of the Pao–Sah current formulation in terms of the mobile carrier concentration under an appropriate ...
Plasma waves in gated 2-D systems can be used to efficiently detect THz electromagnetic radiation. Solid-state plasma wave-based sensors can be used as detectors in THz imaging systems. An experimental study of the sub-THz response of II-gate strained-Si Schottky-gated MODFETs (Modulation-doped Field-Effect Transistor) was performed. The response of the strained-Si MODFET has been characterized...
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