An analytic technique and figureof-merit (Fnm) for the trade-off of noise measure and mismatch loss in the design of low noise amplifier is presented. The trade-off between various design parameters as a function of inductive source degeneration is evaluated using the developed design curve. It is shown that the design curves are unique to the selected device. Several devices demonstrated condi...

In this paper, we experimentally investigate the performance of an efficient high gain triple-pass L-band ErbiumDoped Fiber (EDF) amplifier structure with a single pump source. The amplifier gain and noise figure variation with EDF pump power, input signal power and wavelengths have been investigated. The generated backward Amplified Spontaneous Emission (ASE) noise of the first amplifier stage...

This paper presents a novel lownoise amplifier (LNA) for the 2 to 4.6 GHz applications. The LNA uses a circuit topology consisting of two gain stages with two feedback loops using ATF technology. The noise figure of this LNA varies from 1.5 to 5.4 dB, and its gain varies from 5 to 13 dB throughout the operating frequency band.The S11 and S21 simulated and measured results are presented, and sho...

The manufacturing of intravascular imaging coils poses several challenges. Due to their size, it can be difficult to incorporate local matching networks and signal amplifiers. The goal of this study is to investigate tuning and amplification strategies for intravascular coils and to assess the signal-to-noise benefits of incorporating a matching network and/or miniature amplifier into catheter-...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

We have proposed a 2 GHz CMOS Differential Low Noise Amplifier (LNA) for wireless receiver system. The LNA is fabricated with the 0.18 μm standard CMOS process. Cadence design tool Spectre_RF is used to design and simulation based on resistors, inductors, capacitors and transistors. Power constrained methodology is used for the design of Differential Low Noise Amplifier. Consuming 9mA current a...

1,2 Anna University Abstract—Low noise amplifier is a crucial and essential component in RF receiver design. It amplifies the received weak RF signal with minimum noise contribution. Designing Low noise amplifier with CMOS technology is one of the important topics in research fields due to its advantages of low power, low cost and higher integration. Applications of LNA include WLAN, WSN and UW...

This study presents a Ka-band direct-conversion receiver using 28-nm CMOS (Complimentary Metal Oxide Semiconductor) process for radar applications. The designed includes LNA (Low-Noise Amplifier), Mixer, and Baseband amplifier. adopts two-stage cascode amplifier structure. Then, the mixer is single-balanced passive with low flicker noise. At end, baseband transimpedance fat FET (Field-Effect-tr...

A fully-active low-noise amplifier (LNA) for ultrawideband application is presented. Passive on-chip inductor of conventional LNA design is replaced by low-noise active inductor, significantly reducing the total chip area of the proposed CMOS LNA. The core LNA circuit is a cascoded common-source amplifier loaded with an active inductor. Two buffer stages are used to provide the required input a...