نتایج جستجو برای: luminescence spectroscopy

تعداد نتایج: 182794  

2017
Romain Gautier Camille Latouche Michael Paris Florian Massuyeau

Thermochromic luminescent compounds with d10 metal ions are interesting materials for applications such as sensors or display devices. However, these properties are difficult to predict prior to their synthesis. In this communication, we investigated materials with structural assemblies known to be responsible of distinct luminescence mechanisms and show that they can be interesting potential t...

1999
Encai Hao Haiping Sun Zheng Zhou Junqiu Liu Bai Yang Jiacong Shen

This paper described the optical properties of CdSe and CdSe/CdS nanoparticles, synthesized by the microemulsion method followed by refluxing in toluene/methanol (60:1). Both optical spectroscopy and structural characterization (XPS, XRD, and HRTEM) suggested the core/shell structure of CdSe/CdS samples. Most notable in this work was that capping CdSe nanoparticles with CdS materials yielded a ...

2012
Timur Sh. Atabaev Yoon-Hwae Hwang Hyung-Kook Kim

Rare-earth phosphors are commonly used in display panels, security printing, and fluorescent lamps, and have potential applications in lasers and bioimaging. In the present study, Eu3+- and Dy3+-codoped uniform-shaped Y2O3 submicron particles were prepared using the urea homogeneous precipitation method. The structure and morphology of the resulting particles were characterized by X-ray diffrac...

Journal: :Microelectronics Journal 2004
L. Bouzrara R. Ajjel H. Mejri M. A. Zaïdi S. Alaya J. Mimila-Arroyo Hichem Maaref

Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs samples, also performed are photoluminescence experiments in the temperature range 10–300 K. Two peculiar features were revealed: (i) the radiativ...

2003
V. V. Ursaki I. M. Tiginyanu V. V. Zalamai D. Pavlidis

AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity ~PR! and photoluminescence ~PL! spectroscopy. Under a critical AlN film thickness, the luminescence from the GaN channel layer near the interface proves to be excitonic. No luminescence related to the recombination of the two-dimensional electron gas ~2DEG! is observed, in spite o...

Journal: :Physical review letters 2015
David MacNeill Colin Heikes Kin Fai Mak Zachary Anderson Andor Kormányos Viktor Zólyomi Jiwoong Park Daniel C Ralph

Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of -0.22  meV/T between luminescence peak energies in σ+ and σ- emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedne...

2018
Michal Zalibera Denis S Krylov Dimitrios Karagiannis Paul-Anton Will Frank Ziegs Sandra Schiemenz Wolfgang Lubitz Sebastian Reineke Anton Savitsky Alexey A Popov

The endohedral fullerene Y3 N@C80 exhibits luminescence with reasonable quantum yield and extraordinary long lifetime. By variable-temperature steady-state and time-resolved luminescence spectroscopy, it is demonstrated that above 60 K the Y3 N@C80 exhibits thermally activated delayed fluorescence with maximum emission at 120 K and a negligible prompt fluorescence. Below 60 K, a phosphorescence...

2014
R. S. de Oliveira J. Kulesza S. Alves

This paper focuses on the synthesis and the photoluminescent properties of Ca3 xAl2O6:xEu 3þ (0rxr0.1) nanophosphors prepared by microwave-assisted combustion method without any further heat treatment. X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy were used to characterize the produced samples. Nanosized particles smaller than 120 nmwere obtained as confirme...

2002
S. O. Kucheyev M. R. Phillips G. Li

The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence ~YL! of GaN....

Journal: :Journal of the American Chemical Society 2010
Thumu Udaya B Rao Bodappa Nataraju Thalappil Pradeep

A silver cluster having the composition Ag(9)(H(2)MSA)(7) (H(2)MSA = mercaptosuccinic acid) was synthesized in macroscopic quantities using a solid-state route. The clusters were purified by PAGE and characterized by UV-vis, FTIR, luminescence, and NMR spectroscopy, TEM, XPS, XRD, TG, SEM/EDAX, elemental analysis, and ESI MS. The solid-state route provides nearly pure Ag(9) clusters, and nanopa...

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