Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...

Conditions for Reciprocal CVD Figure S1. Conditions used for graphene growth. (a) Temperature profile and flow parameters during the growth of epitaxial multilayer or poly-crystalline bilayer graphene. (b) Table listing the growth conditions used to prepare the graphene/h-BN heterostructure and the multilayer graphene.

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality ...

Low refractive index Silicon Oxynitride (SiON) layers were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) using SiH4/N2 and N2O. At an index less than 1.473 the as-deposited layers appeared to be unstable in time and sensitive to moisture as could be observed by a spectroscopic ellipsometer. The stability, probably due to partly open structures, could be improved by deposition a...

A zero-order semiempirical model has been developed for chemically enhanced physical vapor deposition CEPVD , a recently developed hybrid approach to film deposition offering the step coverage of chemical vapor deposition while maintaining film quality similar to films produced by ionized physical vapor deposition IPVD . CEPVD is done by introducing a chemical precursor to the substrate during ...

Diamond exhibits a unique range of properties including extreme hardness, mechanical strength, high thermal conductivity, broad-spectrum optical transparency, electrical insulating properties, and chemical resistance. However, its high cost and problems in manipulation have hitherto made it difficult to realize this potential. This situation has dramatically changed with the advent of technique...

Submitted for the DFD10 Meeting of The American Physical Society Vapor stabilizing surfaces for superhydrophobicity1 NEELESH PATANKAR, Northwestern University — The success of rough substrates designed for superhydrophobicity relies crucially on the presence of air pockets in the roughness grooves. This air is supplied by the surrounding environment. However, if the rough substrates are used in...

Lines of TiSi, were written on Si(100) substrates by using a focused Ar+-laser. The reaction gas mixture consisted of TiCl, and H, and the substrate was used a s the silicon source. The laser deposited TiSi, lines were examined as a function of the deposition parameters. Especially the initial reactions have been studied b varying the the writing speed in a wide range. The C-54 phase of TiSi, w...