Electromigration is one of the most important reliability issues in semiconductor technology. Its complex character demands comprehensive physical modeling as basis for analysis. Simulation of electromigration induced interconnect failure focuses on the life-cycle of intrinsic voids, which consists of two distinct phases: void nucleation and void evolution. We present models for both phases as ...

1.—Institute for Microelectronics, Technical University of Vienna, 1040 Vienna, Austria. 2.—School of Engineering, University of Warwick, Coventry CV4 7AL, UK. 3.—Department of Aircraft Technology, Technological Educational Institution of Sterea Ellada, 34 400 Psachna, Greece. 4.—Department of Microelectronics, IAMPPNM, NCSR ‘Demokritos’, 153 10 Athens, Greece. 5.—Department of Physics, Compute...

This tutorial is intended to graduate students, specialized in microelectronics formation. Before this work, the concerned students have spent one week in the cleanroom. In this training, with the help of teachers of the common microelectronics center, they processed and characterized a specific thin film transistor technology. The main goal was to set-up a bench that allows measuring dynamic p...

Comparative Studies of -Doped In0.45Al0.55As/In0.53Ga0.47As/GaAs Metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au Gates Ke-Hua Su, Wei-Chou Hsu, Ching-Sung Lee, I-Liang Chen, Yeong-Jia Chen, and Chang-Luen Wu Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 70101, Taiwan Department of Electronic Engineering, Feng Chia University, Taic...

The mixed teaching mode plays an increasingly important role in stimulating students’ interest and autonomy learning, strengthening learning ability. full integration of microelectronics can not only achieve the objectives smoothly, but also enable students to deepen their understanding memory relevant knowledge with help diversified interesting methods. Therefore, this paper takes course as ex...

As miniaturization of microelectronics reaches sub-10 nm scale, signal crosstalk and parasitic resistive-capacitive delay significantly limit device performance. While low dielectric constant (low-κ) dielectrics are widely recognized to address such issue, their poor thermal conductivity impedes heat management. Recently, scientists from Northwestern University Virginia demonstrated the fabrica...

Several optical methods for in-situ displacement measurement are presented as a tool to characterize thermomechanical behavior of microelectronics subassemblies. Features and recent developments of the methods are reviewed and applications to diverse problems are illustrated to demonstrate wide applicability of the methods. The whole-field displacement information, with various sensitivity and ...