An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...

In this paper, variability analysis of a graded-channel dual-material (GCDM) double-gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed using Sentaurus TCAD. By varying the different device parameters, proposed GCDM-DG s-Si respect to variations in threshold voltage, drain current, and short-channel effects as line edge roughness fluctuations random dopant, contact resistanc...

A combination of recessed-gate and gate-field plate in lateral β-Ga 2 O 3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed the Technology Computer Aided Design study to improve its ON resistance (R ) breakdown voltage. Enhancement-mode (E-mode) achieved by controlling thickness recessed-gate. Lateral E-mode MOSFET achieves a saturation current density near 120 mA/mm, I /I ...

A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and investigated by numerical TCAD simulation. Results show that it has same breakdown voltage as an optimized practical k value of 30 for its insulation pillar, which results in highest (1857 V). The forward (VF) reverse recovery charge (QRR) device are 0.9 V 3.49 μC/cm2...

This work provides a detailed discussion about power converter circuits using SiC MOSFET, classical approach to designing gate drivers for and mitigation of voltage glitch crosstalk in MOSFET active as well passive miller clamp. Different type driver configuration has been discussed this work. Crosstalk exits on the gate-source terminal MOSFET. Active clamps are used eliminate any which is avai...

The significance of optimization of gate–source/drain extension region (also known as underlap design) in double gate (DG) silicon-on-insulator (SOI) FETs to improve the linearity performance of a low power folded cascode operational transconductance amplifier (OTA) is described. Based on a new figure-of-merit (FoM) involving AV , linearity, fT and dc power consumption PDC , the paper presents ...