نتایج جستجو برای: mosfet dosimetry
تعداد نتایج: 11119 فیلتر نتایج به سال:
Analytical models on metal–oxide–semiconductor field-effect transistor (MOSFET) scaling and complementary (CMOS) ring oscillator performance developed recently are applied to revisit CMOS design guidelines because those based on the basic long channel model are obsolete. Handy and empirical equations for deep submicrometer MOSFET drain saturation current are developed. The differences between t...
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects a...
A neuro-fuzzy network approach is developed to model the nonlinear behavior of submicron metal-oxide semiconductor field-effect transistors (MOSFETs). The proposed model is trained and implemented as a MOSFET in a software environment. The training data are obtained through various simulations of a MOSFET Berkeley short channel insulated-gate field-effect transistor model 3 (BSIM3) in HSPICE, a...
The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel ...
The paper is devoted to review of development and application of EPR dosimetry with teeth in Ukraine. It deals with specific features of the EPR dosimetry protocol, which was developed and is practically used in SCRM for retrospective dosimetry of clean-up workers (liquidators). Extensive methodological research was conducted in SCRM in order to develop an original version of EPR dosimetric pro...
background: the purpose of this study was to investigate the various gantry angle and ssd dependencies of tld and mosfet dosimeters. materials and methods: lif (mg) tld and mosfet were used in this study. dosimeter systems were calibrated and then irradiated at various gantry angle and ssd by applying 6 mv photon energy. results: based on the results, mosfet changes were found to be in 2% range...
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
The short circuit withstand energy (SCWE) variations, and time (SCWT) of planar trench silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices are studied after exposure to a total ionizing dose (TID). results for ON bias explored. SCWE SCWT SiC MOSFET tested TID with gamma irradiation. A higher degradation phenomenon the observed MOSFET. physical mechanis...
Several national and international organizations have developed various types and levels of external audits for radiotherapy dosimetry, either based on on-site review visits or using mailed dosimetry systems. Three major TLD (thermoluminescent dosimetry) networks make available postal dose audits to a large number of radiotherapy centres on a regular basis. These are the IAEA/WHO TLD postal dos...
Abstract Introduction: This is the second of two papers giving an overview use Monte-Carlo techniques for radiotherapy applications. Methods: The first paper gave introduction and introduced some codes that are available to user wishing model different aspects treatment. It also aims serve as a useful companion curated collection on have been published in this journal. Results Conclusions: focu...
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