A photolummescence (PL) study of Be and Au ion-implanted GaN is pre­ sented GaN samples were implanted and selectively annealed prior to excita­ tion by a HeCd laser The resulting luminescence was dispersed by a grating spectrom eter and detected using a photomultiplier tube Be is proposed to form a shallow acceptor in GaN and is thus critical to device development and performance From analysis...

AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, dUID, varying between 50 nm and 500 nm. We have found that the heterostructures with UID buffers thicker than 200 nm exhibit much improved Hall properties and inter-device isolation current...

Abstract Wavelength-dispersive X-ray (WDX) spectroscopy was used to measure silicon atom concentrations in the range 35–100 ppm [corresponding (3–9) × 10 18 cm −3 ] doped Al x Ga 1– N films using an electron probe microanalyser also equipped with a cathodoluminescence (CL) spectrometer. Doping Si is usual way produce n -type conducting layers that are critical GaN- and N-based devices such as L...

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a...

In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga1-xMnxN with 0.006≤x≤0.023 was found within a te...

Although p-type activation of GaN by Mg underpins a mature commercial technology, the nature of the Mg acceptor in GaN is still controversial. Here, we use implanted Eu as a 'spectator ion' to probe the lattice location of Mg in doubly doped GaN(Mg):Eu. Photoluminescence spectroscopy of this material exemplifies hysteretic photochromic switching (HPS) between two configurations, Eu0 and Eu1(Mg)...

Ž . Wide bandgap semiconductors such as diamond and the III–V nitrides GaN, AlN, and AlGaN alloys exhibit small or even negative electron affinities. Results have shown that different surface treatments will modify the electron affinity of Ž . diamond to cause a positive or negative electron affinity NEA . This study describes the characterization of these surfaces Ž . with photo-electron emiss...

Adsorption of NO2 molecule on pristine and N-doped TiO2 anatase nanoparticles have been studied using the density functional theory (DFT) technique. The structural properties (such as bond lengths and bond angles) and the electronic properties (such as density of states, band structures and atomic partial charges) have been computed for considered nanoparticles. The result...