M any electronic systems must be tuned through the variation of reactance of one or more circuit elements. In these applications it is often desirable to perform this tuning under electronic rather than manual control. Tuning varactor diodes, which are pn junction devices that act as voltage controlled variable capacitors, can perform this function, and are used in a wide range of product appli...

We study the properties of junctions created by the crossing of N identical branches of linear discrete networks. We reveal that for N>2 such a junction creates a topological defect and supports two types of spatially localized modes. We analyze the wave scattering by the junction defect and demonstrate nonzero reflection for any set of parameters. If the junction is nonlinear, it is possible t...

Dopant activation annealing of an elevated Ge-S/D structure formed on Si was investigated for application in advanced CMOSFET fabrication. Due to the low melting point of Ge, dopant activation was observed below 600 8C. However, the low temperature annealing process resulted in high reverse-bias p–n junction leakage. A thermal process budget of 900 8C, 60 s was found to be the minimum necessary...