P mono-doped and (P, N) co-doped ZnO are investigated by the first-principles calculations. It is found that substitutive P defect forms a deep acceptor level at O site (PO) and it behaves as a donor at Zn site (PZn), while interstitial P (Pi) is amphoteric. Under equilibrium conditions, these defects contribute little to the p-type conductivity of ZnO samples since the formation energy of PZn ...

Solution-based ZnO nanorod arrays (NRAs) were modified with controlled N doping by an advanced ion implantation method, and were subsequently utilized as photoanodes for photoelectrochemical (PEC) water splitting under visible light irradiation. A gradient distribution of N dopants along the vertical direction of ZnO nanorods was realized. N doped ZnO NRAs displayed a markedly enhanced visible-...

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm at room temperature. Its luminescent properties have been intensively investigated for samples, in the for...

Doping ZnO with rare earth and 4d transition elements is a popular technique to manipulate the optical properties of ZnO systems. These systems may also possess intrinsic ferromagnetism due to their magnetic moment borne on 4f and 4d electrons. In this work, the structural, electronic, and magnetic properties of Eu- and Pd-doped ZnO were investigated by the ab initio density functional theory m...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electro...

Novel nano-catalysts (Nano ZnO and Fe doped ZnO (Fe(0.1)Zn(0.99)O) synthesized by co-precipitation method in aqueous solution as new nanocatalysts and characterized by common techniques as FTIR, XRD, SEM and UVD. The size of particles obtained from XRD data is 27 and 16 nanometers for ZnO and Fresno respectively. Influences of doped Fe on ZnO catalytic properties in oxidation of Benzylic alcoho...

A detailed study has been presented of optical, electrical, structural and magnetic properties of Zn1–xCoxO (0 < x ≤ 0.25) films co-doped with 1 at. % of Al. The polycrystalline films have been synthesized on Corning glass 7059 substrates by the sol-gel technique using spin coating. Highly preferential c-axis oriented films have been obtained at the annealing temperature of 600 °C. The lattice ...

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

A study of ZnO-based ceramic films prepared by the spray-pyrolysis technique is presented. Pure and Ni-doped thin film samples were deposited as a coating on glass substrate experimentally characterized using scanning electron atomic force microscopies, X-ray diffraction, UV-vis-NIR spectroscopy. The morphologic, crystallographic, optical properties analyzed. Structural electronic compared to p...