In this work, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in biosensing are presented. In contrast to the conventional electrical read-out of III-nitride-based sensors, a purely optical photoluminescence read-out is performed. Particularly, optical investigations of the iron-storage molecule ferritin deposited on GaInN quantum wells are p...

the electronic and structural properties of pristine and carbon doped (c-doped) boron nitride nano-ribbons(bnnrs) have been studied employing density functional theory (dft) calculations. total energies, gapenergies, dipole moments, and quadrupole coupling constants (qcc) have been calculated in the optimizedstructures of the investigated bnnrs. the results indicated that the stability and gap ...

Tantalum (Ta) oxide, due to its high-temperature capabilities and thermal expansion coefficient similar to silicon nitride, is a promising candidate for environmental barriers for silicon (Si) nitride-based ceramics. This paper focuses on the development of plasma-sprayed Ta oxide as an environmental barrier coating for silicon nitride. Using a D-optimal design of experiments, plasma-spray proc...

In this paper, we present two four-port optical circulators for TE and TM modes, respectively. Exploiting the recent technological development concerning Ce:YIG pulse laser deposition on silicon nitride platform, we design two integrated circulators, which can be used to implement several functions in integrated optics, such as de-interleavers, input/output amplifier isolators and output laser ...

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminesce...

This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexap...

Band gap-tunable potassium doped graphitic carbon nitride with enhanced mineralization ability was prepared using dicyandiamide monomer and potassium hydrate as precursors. X-ray diffraction (XRD), N2 adsorption, UV-Vis spectroscopy, Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) were used to...

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown ...

The first molecular dynamics (MD) study was conducted to explore mechanical-failure response of ultrafine grained single-layer boron-nitride films. We used MD simulations to construct relatively large molecular models of polycrystalline structures with random grain configurations. By applying uniaxial tensile loading, we then studied the grain size effect on the mechanical response of polycryst...