نتایج جستجو برای: organic thin film transistors otfts

تعداد نتایج: 392440  

Journal: :Chemical communications 2013
Prashant Sonar Tae-Jun Ha Ananth Dodabalapur

A fluorenone based alternating copolymer () with a furan based fused aromatic moiety has been designed and synthesized. exhibits a small band gap with a lower HOMO value. Testing this polymer semiconductor as the active layer in organic thin-film transistors results in hole mobilities as high as 0.15 cm(2) V(-1) s(-1) in air.

Journal: :Chemical communications 2012
Prashant Sonar Thelese Ru Bao Foong Samarendra P Singh Yuning Li Ananth Dodabalapur

Furan substituted diketopyrrolopyrrole (DBF) combined with benzothiadiazole based polymer semiconductor PDPP-FBF has been synthesized and evaluated as an ambipolar semiconductor in organic thin-film transistors. Hole and electron mobilities as high as 0.20 cm(2) V(-1) s(-1) and 0.56 cm(2) V(-1) s(-1), respectively, are achieved for PDPP-FBF.

Journal: :Angewandte Chemie 2012
Youhei Takeda Trisha L Andrew Jose M Lobez A Jolene Mork Timothy M Swager

A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...

2009
C. Chen Charlene Chen Jerzy Kanicki Katsumi Abe Hideya Kumomi

In this paper, we investigated the application of amorphous InGa-Zn-O (a-InGaZnO) thin film transistors (TFTs) to activematrix organic light emitting display (AM-OLED) pixel circuits. SPICE model of a-InGaZnO TFTs was developed based on experimental data. Several pixel circuits were explored, and the potential advantages of using a-InGaZnO TFTs were discussed.

Journal: :Chemical communications 2009
Jianwen Zhao Chun Wei Lee Xuanding Han Fuming Chen Yanping Xu Yizhong Huang Mary B Chan-Park Peng Chen Lain-Jong Li

The reactivity of organic radicals produced by 1,1'-azobis(cyanocyclohexane) (ACN) is tuned to selectively suppress electrical conduction of small diameter single-walled carbon nanotubes, and the modified tubes are able to produce high-mobility (approximately 10 cm2 V(-1) s(-1)) and solution-processable thin-film transistors with full semiconductor device yield, promising applications in high-p...

Journal: :Advanced materials 2010
Madhusudan Singh Hanna M Haverinen Parul Dhagat Ghassan E Jabbour

In this Progress Report we provide an update on recent developments in inkjet printing technology and its applications, which include organic thin-film transistors, light-emitting diodes, solar cells, conductive structures, memory devices, sensors, and biological/pharmaceutical tasks. Various classes of materials and device types are in turn examined and an opinion is offered about the nature o...

2008
Mingsheng Xu Masakazu Nakamura Kazuhiro Kudo

We have fabricated planar bottom-contact organic thin-film transistors as a function of the thickness of the pentacene active layer. The highest mobility of the planar bottom-contact transistors is 0.47 cm/Vs with only a 7 nm pentacene active layer. Our planar bottom-contact transistors show much higher mobility than conventional bottom-contact counterparts and even higher than the reported mob...

2015
A. Dragoneas L. Hague M. Grell

The presence of multiple independent sensing parameters in a single device is the key conceptual advantage of sensor devices based on an organic thin film transistor (OTFT) over simple organic chemiresistors. Practically, however, these multiple parameters must first be extracted from the electrical characteristics of the OTFTs and, thus, they are not immediately apparent. To exploit the advant...

2015
N. Wrachien A. Cester A. Stefani G. Turatti M. Muccini

We performed constant voltage stresses with different bias conditions on all-organic complementary inverters. We found a 20% maximum variation of DC inverter parameters after a 10-s stress. However, the largest stress-induced degradation was found in the delay times, which increased by a factor as high as 7. This is mainly due to the threshold voltage variation of the p-type thin-film-transisto...

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