Amorphous Tungsten Oxide (alpha-WO3) film is one of the most studied electrochromic (EC) materials. It can be used as EC layer in EC devices. Electrochromism can be described as reversible change optical properties, by an applied external voltage. Here alpha-WO3 thin films were deposited onto glass and ITO substrates by reactive DC magnetron sputtering for EC application. Growth temperature, ox...

Hafnium and zirconium oxide films were prepared by atomic layer deposition (ALD) from dialkylamido precursors. Water was used as the oxygen source. Nanolaminates of hafnium, zirconium and aluminum oxide were also prepared. Atomic force microscopy was used to characterize the surface morphology of 10–100 nm thick films grown from 501C to 3001C. X-ray diffraction was used to characterize the film...

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achie...

This paper presents an investigation on titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film, which is used as sensing membrane for extended-gate field effect transistor (EGFET) for pH sensing application. TiO2/ZnO thin films were deposited using sol-gel spin coating method on indium tin oxide (ITO) substrates. After the deposition, the bilayer films were annealed at constant temperatures ...

We have measured electromagnetic energy harvesting properties of all-thin-film magnetoelectric (ME) heterostructures on Si cantilevers. The devices are built on a silicon oxide/nitride/oxide stack, and the ME layers consist of a magnetostrictive Fe0.7Ga0.3 thin film and a Pb(Zr0.52Ti0.48)O3 piezoelectric thin film. The harvested peak power at 1 Oe is 0.7 mW/cm (RMS) at the resonant frequency (3...

Thin films of tin oxide were deposited by electron beam evaporation. The effects of the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin films were investigated. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy All the films were found to be amorphous. The current-voltage characteristic of the sensor in air has shown that sem...

The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the...

In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies. In thin-film transistors this effect l...

CP Ti was mirror-polished and then abraded with waterproof SiC papers of two different grit sizes: 16 and 3 microm. As-polished and abraded surfaces were characterized by means of EPMA, XPS, XRD, and hardness test. Oxygen in the mirror-polished surface was uniformly distributed at the lowest level. Comparatively, abrading with SiC papers increased the surface oxygen amount and hardness. Owing t...

Many liquid metals exposed to air develop an oxide film on their outer surface. This film is sufficiently solid-like to provide mechanical stability to small liquid metal droplets, yet weak enough to allow the droplets to be malleable. These properties are useful in both micro-electronics and microfluidics; however, little is known about how to characterize them. Here we probe the elastic, yiel...