In this work we study Ge transistor structures grown on silicon substrate. We use photoluminescence to determine the band gap of Ge under tensile strain. The strain is induced by growing Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled using a 30 band k·p model based on first principles calculations. Photoluminescence measurements show a reasonable corre...

This paper presents results of porous Sic characterization using photoluminescence, Raman scattering and Atomic Force Microscopy. A comparative optical spectroscopy study on bulk Sic and porous Sic layers has shown a number of new features specific to nano-crystallite materials. The role of these effects on optical spectroscopy data in porous Sic accessed by photoluminescence and Raman scatteri...

Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1...

We have studied doped superlattices of GaAs/AlGaAs composition. When the doping atoms are introduced into the barriers surrounding the superlattice, as well as to the inner ones, but with half of the concentration, the photoluminescence due to interband transitions from extended superlattice states is detected. This is demonstrated by a study of the sample’s photoluminescence in a magnetic fiel...

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quan...

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-expone...

We observe ultraviolet photoluminescence from sputtered ZnO quantum dots which are fabricated with no annealing steps. The nanocrystals are embedded in amorphous SiO2 and exhibit a narrow size distribution of 3.5 ± 0.6 nm. Photoluminescence and transmittance measurements show a shift of ultraviolet emission and absorption of the dots compared to bulk ZnO material. This work paves the way for ch...

The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also pr...

In this experimental work, nitrogen-doped carbon quantum dots were successfully synthesized with hydrothermal of the milk. The product was composed of a powder and a stable colloid. The structure of the product was examined by XRD, EDS and FT-IR analysis. Also the particle size of the product was investigated by SEM and TEM images and the results showed the product is mainly composed of the par...

A novel method for demonstration of photoluminescence intensity distribution in upconverting nanorod bundles using confocal microscopy is reported. Herein, a strategy for the synthesis of highly luminescent dual mode upconverting/downshift Y1.94O3:Ho3+0.02/Yb3+0.04 nanorod bundles by a facile hydrothermal route has been introduced. These luminescent nanorod bundles exhibit strong green emission...