Planar and nanowire (NW) tunneling field effect transistors (TFETs) have been fabricated on ultra thin strained and unstrained SOI with shallow doped Nickel disilicide (NiSi2) source and drain (S/D) contacts. We developed a novel, self-aligned process to form the p-i-n TFETs which greatly easies their fabrication by tilted dopant implantation using the high-k/metal gate as a shadow mask and dop...

Ge/Si core/shell nanowires (NWs) are attractive and flexible building blocks for nanoelectronics ranging from field-effect transistors (FETs) to low-temperature quantum devices. Here we report the first studies of the size-dependent performance limits of Ge/Si NWFETs in the sub-100 nm channel length regime. Metallic nanoscale electrical contacts were made and used to define sub-100 nm Ge/Si cha...

BACKGROUND AND PURPOSE Serial study of such MR parameters as diffusion-weighted imaging (DWI), apparent diffusion coefficient (ADC), ADC with fluid-attenuated inversion recovery (ADC(FLAIR)), and T2-weighted imaging may provide information on the pathophysiological mechanisms of acute ischemic stroke. Our goals were to establish the natural evolution of MR signal intensity characteristics of ac...

We report for the first time direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers both a planar template and in-pocket in-plane photonic integration. O-band five QD layers were grown molecular beam epitaxy (MBE) in reactor then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting are demonstrated high yield reliable results ready commercia...

Graphitization of SiC, is attracting particular research interest since it is a very promising way to produce uniform graphene films over large areas. Graphene is a planar one-atom-thick layer of sp2bonded carbon atoms with remarkable electronic transport properties that make it a potential candidate for future electronic applications. However, graphene presents specific structural and electron...

Light trapping across a wide band of frequencies is important for applications such as solar cells and photodetectors. Here, we demonstrate a new approach to light management by forming whispering-gallery resonant modes inside a spherical nanoshell structure. The geometry of the structure gives rise to a low quality-factor, facilitating the coupling of light into the resonant modes and substant...

The ablation depth in planar Sn targets irradiated with a pulsed 1064 nm laser was investigated over laser intensities from 3 1011 to 2 1012 W /cm2. The ablation depth was measured by irradiating a thin layer of Sn evaporated onto a Si wafer, and looking for signatures of Si ions in the expanding plasma with spectroscopic and particle diagnostics. It was found that ablation depth scales with la...

Monolithic integrated lumped planar transformers were introduced more than ten years ago. We present a comprehensive review of the electrical characteristics which results in an accurate lumped low-order equivalent model. Amplifiers, mixers and Meissner-type voltage controlled oscillators using monolithic transformers have been published a few years ago. For the first time, integrated transform...