Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following thi...

A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filling of copper oxide can facilitate fabrication of nanoscale memory devices without using vacuum de...

In this study, the oxygen-deficient TiO 2 , SrTiO 3 systems and transition metal ion (Cr or V) doped TiO 2 , SrTiO 3 and SrZrO 3 systems have been investigated. We prepare samples as polycrystals, single crystals and thin films for various desires. Their structural, physical and electronic properties are measured by bulk-sensitive techniques (X-Ray Diffraction, SQUID and Electro Paramagnetic Re...

A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 - x /ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 - x layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retr...

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon ...

Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged...

Resistive Switching Memory The RuO2 electrode is used to suppress the selector degradation during switching operation. one selector-one resistive memory (1S1R) array using with superior performance fabricated implement a hardware neural network. 1S1R effectively sneak current through high nonlinearity of selector. Three simple alphabets, “L”, “I”, and “X” are classified array, proposed device s...

Abstract The origin of switching parameter variations in metal-oxide resistive-switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset ...

Resistive Switching Memory In article number 2213064, Hui Joon Park, Jong Hwan Ko, Daeho Lee, and co-workers demonstrate analog resistive switching memory (RSM) with unprecedentedly high reliability robustness by laser-assisted photo-thermochemical process. This is compatible back-end-of-line process flexible format. With its superior characteristics, practical adaptive learning rule designed a...

Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM)...