نتایج جستجو برای: resistivityproperties and photocurrent

تعداد نتایج: 16827693  

Abbas Behjat, Naemeh Aeineh, Nafiseh Sharifi,

To investigate the plasmonic effect in perovskite solar cells, the effect of depositing Au@SiO2 nanoparticles on the top and the bottom of mesoporous TiO2 layers was studied. First, Au@SiO2 nanoparticles were synthesized. The particles were then deposited at the different interfaces of mesoporous TiO2 layers. Although the two structures show approximately similar optical absorption, only cells ...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2012
Lixia Liu Wei Zhan

A hybrid molecular photovoltaic system, based on fullerene C(60) and lutein (a natural photosynthetic carotenoid pigment) that are assembled in a phospholipid/alkanethiol bilayer matrix, is described here. The assembly and photoconversion behaviors of such a system were studied by UV-vis spectroscopy, cyclic voltammetry, impedance spectroscopy, photoelectrochemical action spectroscopy, and phot...

2014
Yan Zhao Linfeng Hu Hui Liu Meiyong Liao Xiaosheng Fang Limin Wu

This work presents a method for synthesis of high-yield, uniform and band gap tunable Zn2SnO4 nanocubes. These nanocubes can be further self-assembled into a series of novel nanofilms with tunable optical band gaps from 3.54 to 3.18 eV by simply increasing the heat treatment temperature. The Zn2SnO4 nanocube-nanofilm based device has been successfully fabricated and presents obviously higher ph...

Journal: :Nano letters 2013
Linfeng Hu Megan M Brewster Xiaojie Xu Chengchun Tang Silvija Gradečak Xiaosheng Fang

We demonstrate the controlled growth of coaxial nanocables composed of GaP/ZnS core-shell structures by a facile chemical vapor deposition method. Structural analysis confirms that the cubic GaP (111) plane and wurtzite ZnS (0001) plane present close similarities in terms of hexagonal-arranged atomic configuration with small in-plane lattice mismatch, and the ZnS shell is epitaxially grown on t...

2012
Juerong Li A. M. Gilbertson K. L. Litvinenko L. F. Cohen S. K. Clowes

We measure transverse magnetically focused photocurrent signals in an InSb/InAlSb quantum well device. Using optical spin orientation by modulated circularly polarized light an electron spin dependent signal is observed due to the spin-orbit interaction. Simulations of the focusing signal are performed using a classical billiard ball model which includes both spin precession and a spin dependen...

Journal: :Science 2009
Nathaniel M Gabor Zhaohui Zhong Ken Bosnick Jiwoong Park Paul L McEuen

We observed highly efficient generation of electron-hole pairs due to impact excitation in single-walled carbon nanotube p-n junction photodiodes. Optical excitation into the second electronic subband E22 leads to striking photocurrent steps in the device I-V(SD) characteristics that occur at voltage intervals of the band-gap energy E(GAP)/e. Spatially and spectrally resolved photocurrent combi...

Journal: :Chemical communications 2010
Jieun Yang Hyunseob Lim Hee Cheul Choi Hyeon Suk Shin

A Au-coated C(60) wire device showed wavelength-selective silencing of photocurrent on illumination with 532 nm light.

2007

A photoelectrochemical study was made to compare Zr, Ti, Zn, Sn, Fe, and Cu in 1 N sulfuric acid and/or 1 N KOH. This group includes spontaneously passive, active-passive, and nonpassive metals. The apparent direct and indirect bandgaps and the flatband potentials were measured for the anodic oxides of each metal. (The bandgaps and flat-band potentials can be used to identify the anodic oXide.)...

2006
P. Rauter T. Fromherz G. Bauer N. Q. Vinh B. N. Murdin C. R. Pidgeon

The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser wavelength 7.9 m . Additionally, the intensity dependence of the nonline...

Journal: :ACS nano 2015
Andreas Brenneis Jan Overbeck Julian Treu Simon Hertenberger Stefanie Morkötter Markus Döblinger Jonathan J Finley Gerhard Abstreiter Gregor Koblmüller Alexander W Holleitner

We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through midgap trap states, which form at the ...

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