Absorption measurements on solid conducting targets have been performed in s and p polarization with ultrashort, high-contrast Ti:sapphire laser pulses at intensities up to 5x10{16}W/cm{2} and pulse duration of 8 fs. The particular relevance of the reported absorption measurements lies in the fact that the extremely short laser pulse interacts with matter close to solid density during the entir...

A polarization-enhancing reflector design, which is matched to the emission characteristics of GaInN/GaN 460 nm light-emitting diodes grown on (0001) oriented sapphire substrates, is reported. Side-emitted light from these devices is known to be highly polarized with the electric field in the plane of the active region. Through selective rotation of polarization by the reflector, the in-plane p...

We report observations of the Schawlow-Townes noise limit in a cryogenic sapphire secondary frequency standard. The effect causes a fundamental limit to the frequency stability, and was measured through the novel excitation of a bimodal maser oscillation of a Whispering Gallery doublet at 12.04 GHz. The beat frequency of 10 kHz between the oscillations enabled a sensitive probe for this measure...

The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This Ph...

The speech research community has developed numerous toolkits to support ongoing research (e.g., Sapphire, Spire, Waves, HTK, CSLU Tools, LNKNet). While such toolkits contain extensive and useful functionality, they o er limited user interactivity under the pre-compute and browse paradigm: images are rst pre-computed in entirety, then displayed, at which point the user is able to super cially b...

A comparative assessment of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon and sapphire substrates has been carried out. Large-area power GaN HEMTs with identical device dimensions were fabricated on both substrates. A thicker AlN buffer layer was used for the GaN HEMT on silicon to achieve similar quality and uniformity of GaN epitaxy for ration...

In this article, we propose a crystallographic model to describe epitaxy of GaN on ~112̄0! sapphire ~A plane!. The ~11̄02! cleavage plane in sapphire is shown to extend to the GaN lattice as the ~112̄0! plane, facilitating the formation of cleaved facets. It is shown that, although the lattice mismatch is much smaller than in the case of epitaxy on ~0001!, the difference in the planar symmetry in ...

Plasmonic high-harmonic generation (HHG) drew attention as a means of producing coherent extreme ultraviolet (EUV) radiation by taking advantage of field enhancement occurring in metallic nanostructures. Here a metal-sapphire nanostructure is devised to provide a solid tip as the HHG emitter, replacing commonly used gaseous atoms. The fabricated solid tip is made of monocrystalline sapphire sur...