The effect of gamma irradiation on GaN lateral Schottky barrier diodes (SBDs) has been investigated. Six conditions were carried out, namely 100/500 k rad, 1 M rad and 100°C, 100°C. All the irradiated devices have a similar parameter variation tendency. There is no change for turn-on voltage. on-state resistance reduced from 5.32~5.53 Ω to 5.10~5.26 Ω, while reverse leakage at -100 V increased ...

Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode ́s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstr...

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller con...

Emerging 2D nonvolatile Schottky-barrier-field-effect transistors (NSBFETs) are envisaged to build a promising reconfigurable in-memory architecture mimic the brain. Herein, vertically stacked multilayered graphene (MGr)-molybdenum disufide (MoS2)-tungsten ditelluride (WTe2) NSBFET is reported. The semimetal WTe2 with charge-trapping effect enables simultaneous integration of electrode and self...

Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reve...

Indium oxide (In2O3) tower-shaped nanostructure gas sensors have been fabricated on Cr comb-shaped interdigitating electrodes with relatively narrower interspace of 1.5 μm using thermal evaporation of the mixed powders of In2O3 and active carbon. The Schottky contact between the In2O3 nanotower and the Cr comb-shaped interdigitating electrode forms the Cr/In2O3 nanotower Schottky diode, and the...

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

The aim of the present work is to study the optimization of the electrical and optical properties of a-SiC:H Schottky diodes using thermal annealing process to a-SiC:H thin films in the range from 300C up to 675C. The films were deposited onto c-Si(n) using the rf sputtered method at three different hydrogen flow rates, 9sccm, 14sccm, and 20sccm. Subsequently, Al dots evaporated onto a-SiC:H in...