Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ...

This Application Note presents a SPICE-based method for thermal modeling, simulation and design of a multi-channel power semiconductor switch on a Printed Circuit Board (PCB). The method allows rapid and simultaneous determination of the temperature of semiconductor junctions and the PCB track below the device, both under transient conditions and at steady-state. The model takes thermal cross-c...

Differential cross-polarization modulation (DXPoM) wavelength conversion using a semiconductor optical amplifier has been proposed to outperform substantially traditional cross-polarization modulation (XPoM). This work presents analytical small-signal models of XPoM and DXPoM. The transfer function of DXPoM is used to elucidate the significant improvement in bandwidth and the relationships amon...

Texas Instruments, Inc., Dallas, TX 75243 To successfully construct semiconductor devices, the semiconductor industry must measure fundamental material parameters, especially when developing new materials; measure the quality of the material as it is grown; accutate\y determine the details of thin films, quantum wells, and other microstructures that control or affect device performance; and mea...

We present a novel scheme to increase the THz-bandwidth fast light effect in semiconductor optical amplifiers and increase the number of advanced pulses. By introducing a linear chirp to the input pulses before the SOA and recompressing at the output with an opposite chirp, the advance-bandwidth product reached 3.5 at room temperature, 1.55 microm wavelength. This is the largest number reported...

One of the most important physical parameters to describe the quality of a piece of semiconductor material is the electron scattering length le. Also referred to as the mean-free path, it stands for the average distance between the randomly distributed scatterers in the material, such as lattice defects, impurities, and phonons. The electron mean-free path is typically a few nanometers (1 nm = ...

Various self-consistent semiconductor device equations, such as drift diffusion, hydrodynamic and Boltzmann transport equations require solution of a multi-dimensional Poisson’s equation that describes the potential distribution in the device for a specified doping profile. In this paper, a three-dimensional semiconductor nonlinear Poisson’s equation is solved numerically with finite volume and...

Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which pre...

Carrier relaxation is a key issue in determining the efficiency of semiconductor optoelectronic device operation. Devices incorporating semiconductor quantum dots have the potential to overcome many of the limitations of quantum-well-based devices because of the predicted long quantum-dot excited-state lifetimes. For example, the population inversion required for terahertz laser operation in qu...

The controlled introduction of dopant atoms to semiconducting host materials is the corner stone of electronic device fabrication. Dopant atoms provide a means to modulate the electronic, optical, and magnetic properties of semiconductors [1], and it is now possible to control dopant profiles with true atomic-scale precision in the laboratory [2]. Moreover, industrial fabrication methods are no...