MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the form...

Doping isolated one-dimensional antiferromagnetic semiconductor VS4 nanowires with carriers induces half-metallicity.

Localized surface plasmon resonances (LSPRs) typically arise in nanostructures of noble metals resulting in enhanced and geometrically tunable absorption and scattering resonances. LSPRs, however, are not limited to nanostructures of metals and can also be achieved in semiconductor nanocrystals with appreciable free carrier concentrations. Here, we describe well-defined LSPRs arising from p-typ...

We present an overview of mathematical models for electrons and holes in semiconductors. We use these to pose some inverse problems for determining the doping profile of a semiconductor. We establish the solvability of the equilibrium equation λ4u = e − e−u − C in Ω. We also obtain information about the conductivity coefficient in the important case when it is piecewise constant and discontinuous.

The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demo...

ZnO is a high melting point high charge carrier mobility semiconductor with potential as a thermoelectric material, but its high thermal conductivity is the limiting factor for increasing the thermoelectric figure of merit ZT. Here, we demonstrate that doping ZnO with heavy elements can significantly enhance ZT. Indium doping leads to ultralow κ~3 Wm-1K-1 and a high power factor α2σ~1.230×10-3 ...

State-of-the-art devices are characterized by the occurence of large gradients in the electric field. Due to the complex doping profiles which utilize ultrashallow junctions to obtain an optimum tradeoff between short-channel effects and parasitic resistances, two-dimensional numerical simulation of these structures is mandatory. From the modeling point of view, nonlocal and quantum effects gai...

Under microwave radiation, Ag(+)-doped CdS semiconductor nanocrystals with high photoluminescence quantum yield (approximately 58%) and a surprisingly large optical window (480 to 630 nm) are formed controllably using a center-doping strategy and are optimized through a green approach in pure water solution.