Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability general...

As an alternative to single crystal silicon photovoltaics, thin film solar cells have been extensively explored for miniaturized cost-effective photovoltaic systems. Though the fight to gain efficiency has been severely engaged over the years, the battle is not yet over. In this review, we comb the fields to elucidate the strategies towards high efficiency thin films solar cells and provide poi...

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-ef...

as we know sol-gel is one of the most important techniques for thin film preparation. in this paper, high transmission silica thin films have been prepared by dip-coating process from a new silicon-alkoxide solution. the prepared sol was stable for 45 days which is very important to characterize the coating process. the optical properties as a function of aging time, withdrawal rate, and heat t...

Crystalline yttria-stabilized zirconia oxide (YSZ) film was successfully deposited on a silicon wafer without an interfacial amorphous SiO2 layer. The film with equivalent oxide thickness teox down to 1.77 nm shows negligible hysteresis and low interface state density, less than 3 × 1011 cm−2 eV−1. The leakage current density for teox = 1.77 nm film, 1.5 × 10−5 A cm−2 at 1 V bias voltage, is fi...

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior a...

Pulsed laser irradiation is employed over a wide spectrum of materials processing applications, including surface hardening, alloying, curing, synthesis of compound and semiconductor films. In semiconductor systems,* it is used to anneal ion-implantation surface damage, recrystallize amorphous and polycrystalline films, and enhance dopant diffusion. Recent studies2 have shown that one of the mo...

In this research work, silica nano-porous thin films were deposited on glass substrates by layer by layer method. The thin films were calcinated at various calcination temperatures (200, 300, 400, and 500 °C). The morphology, surface characteristics, surface roughness and hydrophilic properties of the thin films were investigated by field emission scanning electron microscopy, attenuated total ...

Thin film photovoltaic (PV) technologies are highly attractive for low-cost solar energy conversion and possess a wide range of potential applications from building-integrated PV generation to portable power sources. Inverted nanocones (i-cones) have been demonstrated as a promising structure for practical thin film PV devices/modules, owning to their antireflection effect, self-cleaning functi...