Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 ?m thick silicon (001) and 10 3C-silicon carbide (001), grown on 500 were used as substrates structured with dioxide masks. was tested for both thermal deposited oxides. Multiple series showed that coverage vanished at temperatures 870 °C surface temperature 930 substrates. Wher...

Direct air capture is regarded as a plausible alternate approach that, if economically practical, can mitigate the increasing carbon dioxide emissions associated with two of the main carbon polluting sources, namely stationary power plants and transportation. Here we show that metal-organic framework crystal chemistry permits the construction of an isostructural metal-organic framework (SIFSIX-...

Hopping transport through heterostructure solar cells based on B-doped crystalline silicon wafers with highly P-doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T = 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states (g ≈ 2.0046) with a distribution of their mutual ...

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide and, by measuring their electro-optic behavior, we characterize the capacitively induced free-carrier effect. By comparing our results with simulations, we confirm that the observed voltage dependences of the transmission spectra are due to changes in the con...

Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO2 structures) have been investigated after γ-irradiation with the dose 2 × 107 rad and subsequent annealing at 450 °C in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant inc...