We experimentally demonstrate a microelectromechanically (MEMS) tunable photonic ring resonator add-drop filter, fabricated in a simple silicon-on-insulator (SOI) based process. The device uses electrostatic parallel plate actuation to perturb the evanescent field of a silicon waveguide, and achieves a 530 pm resonance wavelength tuning, i.e., more than a fourfold improvement compared to previo...

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumpe...

Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This des...

We describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process metrology in manufacturing of CMOS transistors for the 130 nm node and beyond. Specifically, we describe the difficulties associated with the introduction of silicon-on-insulator (SOI) substrates, alternative gate dielectrics (silicon oxynitride or metal oxides), and strained Si channe...

In this paper, a novel aluminum nitride (AlN) resonant pressure sensor with piezoelectric-excitation and piezoelectric-detection is presented. The key structure of resonator an AlN flexible beam. Parallel electrodes are designed on the beam to excite resonance in-plane. All layers grown silicon-on-insulator (SOI) wafer by deposition process. Anchor islands fabricated in top silicon layer SOI. o...

Low temperature mobility measurements of silicon-on-insulator ~SOI! metal-oxidefield-effect-transistors are reported. The batch of devices fabricated in this work includes both ultrathin and thick devices for which the SOI film thicknesses are in the ranges of 10–15 nm and 56–61 nm, respectively. The 4.2 K peak mobility of the thick devices is 1.9 m/V s. The ultrathin devices show mobility degr...

A 64 x 128 real-time infrared (RTIR) complementary metaloxide semiconductor (CMOS)/ silicon-on-insulator (SOI) scene generation integrated circuit (IC) is described. The RTIR IC offers real-time dynamic thermal scene generation. This system is a mixed-mode design, with analog scene information written and stored into a thermal pixel array. The design uses micro-electromechanical sensors (MEMS) ...