We propose and investigate a spin-cell device which provides the necessary spin-motive force to drive a spin current for future spintronic circuits. Our spin cell has four basic characteristics: (i) it has two poles so that a spin current flows in from one pole and out from the other pole, and in this way a complete spin circuit can be established; (ii) it has a source of energy to drive the sp...

An ac dipole with horizontally oriented oscillating magnetic field (spin flipper) was installed in RHIC to reverse the spin direction in the presence of two full Siberian snakes, thereby reducing the systematic errors for the spin physics experiments in RHIC. With two full snakes, the spin vector completes one full precession around the vertical direction in two revolutions, and the spin depola...

We study bond energy correlation functions in an exactly solvable quantum spin model of Kitaev type on the kagome lattice with stable Fermi surface of partons proposed recently by Chua et al. [arXiv:1010.1035v1]. Even though any spin correlations are of ultrashort range, we find that the bond energy correlations have power-law behavior with a 1/|r|3 envelope and oscillations at incommensurate w...

The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice and spin-spin relaxation times of electrons. Minimizing the effects of spin-orbit coupling and the local magnetic contributions of neighbouring atoms on spin-lattice and spin-spin relaxation times at room temperature remain substantial challenges to ...

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, whe...

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device...

We predict that pure spin current flowing through the transverse leads of quantumcoherent two-dimensional electron gas (2DEG), which is induced by conventional unpolarized charge current driven through the longitudinal leads, can be tuned by the Rashba spin-orbit (SO) interaction and will decay only when disorder is sufficiently strong (but before electrons become localized). Furthermore, the p...

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this Letter, we demonstrate a clear transition from spin accumulation into interface...

The electron spin properties are promising for future spin-driven applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in presence of the spin-orbit interaction and strain are investigated. The application of shea...