We present a numerical algorithm to solve the Boltzmann equation for the electron distribution function in magnetic multilayer heterostructures with non-collinear magnetizations. The solution is based on a scattering matrix formalism for layers that are translationally invariant in plane so that properties only vary perpendicular to the planes. Physical quantities like spin density, spin curren...

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the ...

The magnetic structure and magnetic transport properties of hydrogen-passivated sawtooth zigzag-edge graphene nanoribbons (STGNRs) are investigated theoretically. It is found that all-sized ground-state STGNRs are ferromagnetic and always feature magnetic semiconductor properties, whose spin splitting energy gap E(g) changes periodically with the width of STGNRs. More importantly, for the STGNR...

We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than the corresponding DC one. The effect is understood as a consequence of the underdamped nature of the spin-torque oscillators. It allows to use the kinetic iner...

The transport properties of two types spin valves are analyzed, in which the Heusler alloy Co 2 Cr 1-x Fe x Al y was used as one ferromagnetic layers F1/F2/S structures. layer used: 1) a weak ferromagnet, case F2 layer; 2) halfmetal, F1 layer. In first case, large classical effect superconducting valve Delta T c obtained, facilitated by significant triplet contribution to trip . second gigantic...

Spin-torque ferromagnetic resonance (ST-FMR), particularly using magnetic insulators and heavy metals possessing a giant spin Hall effect (SHE), has received lot of attention for the development spintronic devices. To devise complex functional devices, it is necessary to construct equivalent spin-circuit representations different phenomena. Such are useful translating physical equations into ci...

Quantum materials with a large charge current-induced spin polarization are promising for next-generation all-electrical spintronic science and technology. Van der Waals metals high spin-orbit coupling novel textures have attracted significant attention an efficient to conversion process. Here, we demonstrate the electrical generation of in NbSe2 up room temperature. To probe NbSe2, used graphe...