نتایج جستجو برای: sputtering atoms
تعداد نتایج: 67393 فیلتر نتایج به سال:
By sputtering organic films with 10 kV, 10 nA C60+ and 0.2 kV, 300 nA Ar+ ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are profiled. The chemical composition and the structure of each layer are preserved and clearly obse...
We assess key plasma surface interaction issues of an all-metal plasma facing component (PFC) system for ITER, in particular a tungsten divertor surface, and a beryllium or tungsten first wall. Such a system eliminates problems with carbon divertor erosion and T/C codeposition, and for an all-tungsten system would better extrapolate to post-ITER devices. The issues studied are sputtering, trans...
The 10 at.% Co-substituted BiFeO₃ films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO₃ (100) substrates with epitaxial relationships of [001](001)Co-BiFeO₃//[001](001)SrTiO₃. In this study, a single phase Co-substituted BiFeO₃ epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O₂ gas pressure, a...
The lithium-sputtering yield of liquid lithium as a function of sample temperature has been measured in the ionsurface interaction experiment (IIAX). Lithium sputtering is measured for Dþ, Heþ and Li bombardment at energies between 100 and 1000 eV at 45 incidence. In this work VFTRIM-3D is used to provide a qualitative physical picture of mechanisms responsible for the temperature dependence of...
In high-dose ion implantation for materials modification, the maximum concentration of the implanted species is determined by ion-induced erosion (sputtering) of the implanted layer. In this review, we consider the influence of preferential sputtering and atomic mixing. The maximum concentration of the implanted species is given roughly by r IS and extends over a depth W where S is the sputteri...
[1] The lunar exosphere is produced by a combination of processes including thermal desorption, micrometeoroid bombardment, internal gas release, photon-stimulated desorption, and charged-particle sputtering. Here we investigate an additional mechanism not previously considered for the Moon, namely the role that newly born ions from the exosphere itself play in sputtering additional neutrals fr...
We have measured total sputtering yields for impact of slow (#100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from LiF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identif...
Coating growth and mechanical properties of nanolamellar Cr2AlC coatings at various sputtering power were investigated in the present study. Cr2AlC coating was deposited on the IN 718 superalloy and (100) Si wafers by DC magnetron sputtering at different sputtering powers. The structure and properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmis...
Interstellar shock waves can erode and destroy grains present in the shocked gas, primarily as the result of sputtering and grain-grain collisions. Uncertainties in current estimates of sputtering yields are reviewed. Results are presented for the simple case of sputtering of fast grains being stopped in cold gas. An upper limit is derived for sputtering of refractory grains in C-type MHD shock...
Measurements have been made of the sputtering yields, the mass spectra of ejected molecules, and ejection rates for various kiloelectronvolt ions incident on sodium sulfide (Na2S). The sputtering yields were small compared to those measured earlier for the more volatile sulfur ($8) and SO2 due to the strong ionic bonding in the solid. The mechanism of sputtering for the corotating sulfur and ox...
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