نتایج جستجو برای: stoichiometric lead

تعداد نتایج: 346719  

Journal: :Acta Crystallographica Section A Foundations of Crystallography 1987

Journal: :Advanced electronic materials 2023

Bioelectronic devices such as neural stimulation and recording require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness biological inertness. In this work, stoichiometric TiN thin films fabricated using a dual Kaufman ion-beam source setup, without the necessity substrate heating. These layers remarkable comp...

Journal: :Crystals 2021

In this paper, the effects of CuO sintering aids on microstructure and electric properties are investigated for non-stoichiometric (Na0.48K0.473Li0.04Sr0.007)(Nb0.883Ta0.05Sb0.06Ti0.007)O3+x mol% lead free ceramics. As amounts equal 1 mol%, temperature is 975 °C piezoelectric parameters d33 = 200 pC/N, g33 38 (10−3 Vm/N), × 7600 (10−15 m2/N), kp 0.38, Qm 240, Pr 18.93 μC/cm2 EC 8.75 kV/cm. The ...

Journal: :The Journal of chemical physics 2008
Changjun Zhang Angelos Michaelides David A King Stephen J Jenkins

Within the framework of the GGA+U implementation of density functional theory, we investigate atomistic and electronic structures of Au adsorbed on the stoichiometric and the defective CeO(2){111} surfaces, in the latter of which either O or Ce vacancies are presented. We show that on the stoichiometric surface, the most stable adsorption site of Au is not on the top of the outermost O atoms, a...

2006
Elizabeth M. Dickman Michael J. Vanni Martin J. Horgan

The stoichiometric composition of autotrophs can vary greatly in response to variation in light and nutrient availability, and can mediate ecological processes such as C sequestration, growth of herbivores, and nutrient cycling. We investigated light and nutrient eVects on phytoplankton stoichiometry, employing Wve experiments on intact phytoplankton assemblages from three lakes varying in prod...

2013
S. V. Raj

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It is concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, decreased fro...

Journal: :Journal of the Less Common Metals 1980

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