Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 cm• At high dose levels, the number...

Z. Naturforsch. 60a, 408 – 410 (2005); received March 2, 2005 On the basis of the most recently reported spectroscopic data on vibrational modes in TeCl4 and structural parameters of TeCl4, an estimation of its main force constants complemented with the calculation of mean amplitudes of vibration in a wide temperature range have been performed. Also thermodynamic functions for the ideal gaseous...